Determination of topological parameters of a laser with passive mode-locking on the basis of InGaAlAs/InGaAs/InP heterostructures

G. A. Mikhailovskii, I. S. Polukhin, D. A. Rybalko, Yu. V. Solov’ev, M. A. Odnoblyudov

Peter the Great St. Petersburg Polytechnic University

Abstract: Topological parameters of a strip-geometry laser with passive mode-locking on the basis of an InGaAlAs/InGaAs/InP heterostructure are determined from the condition for the existence of one transverse mode in a strip waveguide. The strip width was 1.5 $\mu$m, the mesa etch depth was 1.32 $\mu$m, and the thickness of the dielectric layer was 0.36 $\mu$m.

Received: 01.12.2015

 English version: Technical Physics Letters, 2016, 42:5, 471–474

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