This article is cited in 3 papers

Crystallization of amorphous hydrogenated silicon ($a$-Si:H) films under irradiation with femtosecond laser pulses

V. P. Belik^a, O. S. Vasutinskii^a, A. V. Kukin^a, M. A. Petrov^ab, R. S. Popov^ab, E. I. Terukov<sup>ac

a</sup> Ioffe Institute, St. Petersburg
^b Peter the Great St. Petersburg Polytechnic University
^c R&D Center TFTE, St.-Petersburg

Abstract: Crystallization of thin films of amorphous hydrogenated silicon under the irradiation of femtosecond laser pulses has been studied. It was found that the crystallization has a clearly pronounced threshold nature and depends on the laser emission wavelength. As shown the best results are achieved in crystallization at the laser wavelength range of 740–760 nm.

Received: 23.03.2016

 English version: Technical Physics Letters, 2016, 42:8, 788–791

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