V. A. Gevorkyan, K. M. Gambaryan, T. S. Argunova, I. L. Shul'pina, “Dislocation-structure and volt-ampere characteristics of diode smooth <nobr>$n-In\,As/p-In\,As_{1-x}\,P_{x}$</nobr> heterosystems, obtained by the electric liquid epitaxy method”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 1987, Volume 13, Issue 18,Pages <nobr>1134

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Pisma v Zhurnal Tekhnicheskoi Fiziki, 1987 Volume 13, Issue 18, Pages 1134–1139 (Mi pjtf631)

Dislocation-structure and volt-ampere characteristics of diode smooth $n-In\,As/p-In\,As_{1-x}\,P_{x}$ heterosystems, obtained by the electric liquid epitaxy method

V. A. Gevorkyan, K. M. Gambaryan, T. S. Argunova, I. L. Shul'pina

Received: 13.02.1987
Revised: 13.07.1987

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