Terahertz emission at impurity electrical breakdown in Si(Li)

A. V. Andrianov^a, A. O. Zahar'in^a, R. Kh. Zhukavin^b, V. N. Shastin^bc, D. V. Shengurov^b, N. V. Abrosimov<sup>d

a</sup> Ioffe Institute, St. Petersburg
^b Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
^c Lobachevsky State University of Nizhny Novgorod
^d Leibniz Institute for Crystal Growth, Berlin, Germany

Abstract: Terahertz electroluminescence caused by impurity-induced breakdown in lithium-doped silicon crystals is studied. The spectrum of the terahertz emission exhibits lines corresponding to intracenter electronic transitions between excited states of the impurity and sublevels of the ground state of the lithium donor. The spectrum also shows a background signal, which, apparently, is a manifestation of the effects due to heating at electric excitation.

Received: 31.05.2016

 English version: Technical Physics Letters, 2016, 42:10, 1031–1033

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