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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2017 Volume 43, Issue 1, Pages 5–13 (Mi pjtf6025)

This article is cited in 2 papers

Radiation enhancement in doped AlGaN-structures upon optical pumping

P. A. Bokhana, K. S. Zhuravlevb, Dm. È. Zakrevskiia, T. V. Malina, I. V. Osinnykha, N. V. Fateeva

a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
b Novosibirsk State University

Abstract: Spectral characteristics of spontaneous and stimulated luminescence have been studied for molecular beam epitaxy synthesized Al$_{x}$Ga$_{1-x}$N/AlN solid solutions with $x$ = 0.5 and 0.74 upon optical pumping by pulse laser radiation with $\lambda$ = 266 nm. Broadband radiation spectra with a width of $\sim$260 THz for Al$_{0.5}$Ga$_{0.5}$N and $\sim$360 THz for Al$_{0.74}$Ga$_{0.26}$N have been obtained. The measured enhancement factors are $g\approx$ 70 cm$^{-1}$ for Al$_{0.5}$Ga$_{0.5}$N at $\lambda\approx$ 528 nm and $g\approx$ 20 cm–1 for Al$_{0.74}$Ga$_{0.26}$N at $\lambda\approx$ 468 nm.

Received: 17.07.2016

DOI: 10.21883/PJTF.2017.01.44083.16442


 English version:
Technical Physics Letters, 2017, 43:1, 46–49

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