This article is cited in 22 papers

Polishing superhard material surfaces with gas-cluster ion beams

A. E. Ieshkin^a, K. D. Kushkina^a, D. S. Kireev^a, Yu. A. Ermakov^b, V. S. Chernysh<sup>ab

a</sup> Lomonosov Moscow State University
^b Lomonosov Moscow State University, Skobeltsyn Institute of Nuclear Physics

Abstract: We have studied the influence of bombardment with accelerated gas-cluster ions on the surface topography of silicon carbide and diamond. Atomic-force microscopy shows that exposure to 10-keV gas-cluster ions at a total dose above 10$^{16}$ cm$^{-2}$ leads to smoothing of the surface relief. The ion-etching rate and efficiency of the surface relief smoothing as dependent on the thickness of removed layer have been estimated. Raman-spectroscopy data show that surface irradiation with gas-cluster ions does not introduce defects into the crystalline structure of irradiated material.

Received: 16.08.2016

DOI: 10.21883/PJTF.2017.02.44182.16459

 English version: Technical Physics Letters, 2017, 43:1, 95–97

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