V. A. Sergeev, I. V. Frolov, O. A. Radaev, “The relationship between the defectness of emitting nanoheterostructures of green InGaN/GaN LEDs and their threshold current values”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2017, Volume 43, Issue 4,Pages <nobr>89

This article is cited in 4 papers

The relationship between the defectness of emitting nanoheterostructures of green InGaN/GaN LEDs and their threshold current values

V. A. Sergeev^ab, I. V. Frolov^a, O. A. Radaev^ab

^a Ul'yanovsk Branch of Institute of Radioengineering and Electronics, Russian Academy of Sciences
^b Ulyanovsk State Technical University

Abstract: It is shown that the threshold current of green InGaN/GaN light-emitting diodes (LEDs) can be used for evaluating quality of their light-emitting nanoheterostructures. The threshold current exhibits correlation with the value of operating current corresponding to the maximum of the external quantum efficiency of LEDs. It has been found that LEDs with high threshold currents tested in the dc regime exhibit faster degradation than devices with lower threshold currents.

Received: 26.05.2016

DOI: 10.21883/PJTF.2017.04.44302.16344