This article is cited in 10 papers

Monitoring of elastic stresses with optical system for measuring the substrate curvature in growth of III–N heterostructures by molecular-beam epitaxy

D. S. Zolotukhin, D. V. Nechaev, S. V. Ivanov, V. N. Zhmerik

Ioffe Institute, St. Petersburg

Abstract: An original optical system for measuring substrate curvature (OSMSC) is described. The system enables a high-precision analysis of the processes of generation and relaxation of elastic stresses in growth of heterostructures (HSs) based on nitride compounds III–N by plasma-assisted molecular-beam epitaxy (PA-MBE). The application of OSMSC to analyze the growth of GaN/AlN/Si(111) HSs made it possible not only to observe in detail the variation dynamics of elastic stresses in this structure in its metal-enriched growth by low-temperature PA-MBE, but also to develop an HS design eliminating the effect of layer cracking by controlling the compressive stresses.

Received: 28.09.2016

DOI: 10.21883/PJTF.2017.05.44363.16508

 English version: Technical Physics Letters, 2017, 43:3, 262–266

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