Abstract:
White-light illumination during the adsorption of polyanionic molecules of glucose oxidase (GO$_x$) enzyme on the surface of $p$-Si/SiO$_{2}$/polyethylenimine structure leads to a threefold decrease in the surface concentration of GO$_x$ molecules. Same illumination during the GO$_x$ adsorption on the $n$-Si/SiO$_{2}$/PEI structure leads to a sevenfold increase in the surface concentration of enzyme molecules. Changes in the amount of adsorbed GO$_x$ molecules depending on the intensity of irradiation are explained by electron transfer processes and recharging of electronic states at the Si/SiO$_2$ interface and within SiO$_2$ layer.