This article is cited in 8 papers

Increasing saturated electron-drift velocity in donor–acceptor doped phemt heterostructures

D. Yu. Protasov^ab, D. V. Gulyaev^a, A. K. Bakarov^a, A. I. Toropov^a, E. V. Erofeev^c, K. S. Zhuravlev<sup>ad

a</sup> Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
^b Novosibirsk State Technical University
^c Tomsk State University of Control Systems and Radioelectronics
^d Novosibirsk State University

Abstract: Field dependences of the electron-drift velocity in typical pseudomorphic high-electron-mobility transistor (pHEMT) heteroepitaxial structures (HESs) and in those with donor–acceptor doped (DApHEMT) heterostructures with quantum-well (QW) depth increased by 0.8–0.9 eV with the aid of acceptor layers have been studied by a pulsed technique. It is established that the saturated electron-drift velocity in DA-pHEMT-HESs is 1.2–1.3 times greater than that in the usual pHEMT-HESs. The electroluminescence (EL) spectra of DA-pHEMT-HESs do not contain emission bands related to the recombination in widebandgap layers (QW barriers). The EL intensity in these HESs is not saturated with increasing electric field. This is indicative of a suppressed real-space transfer of hot electrons from QW to barrier layers, which accounts for the observed increase in the saturated electron-drift velocity.

Received: 26.10.2017

DOI: 10.21883/PJTF.2018.06.45770.17098

 English version: Technical Physics Letters, 2018, 44:3, 260–262

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