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2 papers
Formation of porous germanium layers by silver-ion implantation
A. L. Stepanovab,
V. V. Vorobevb,
V. I. Nuzhdina,
V. F. Valeeva,
Yu. N. Osinb a Zavoisky Physical Technical Institute, Kazan Scientific Center of the Russian Academy of Sciences, Kazan, Tatarstan, Russia
b Interdisciplinary Center for Analytical Microscopy, Kazan Federal University
Abstract:
We propose a method for the formation of porous germanium (
$P$-Ge) layers containing silver nanoparticles by means of high-dose implantation of low-energy Ag
$^+$ ions into single-crystalline germanium (
$c$-Ge). This is demonstrated by implantation of 30-keV Ag
$^+$ ions into a polished
$c$-Ge plate to a dose of 1.5
$\times$ 10
$^{17}$ ion/cm
$^2$ at an ion beam-current density of 5
$\mu$A/cm
$^2$. Examination by high-resolution scanning electron microscopy (SEM), atomic-force microscopy (AFM), X-ray diffraction (XRD), energy-dispersive X-ray (EDX) microanalysis, and reflection high-energy electron diffraction (RHEED) showed that the implantation of silver ions into
$c$-Ge surface led to the formation of a
$P$-Ge layer with spongy structure comprising a network of interwoven nanofibers with an average diameter of
$\sim$10–20 nm Ag nanoparticles on the ends of fibers. It is also established that the formation of pores during Ag
$^+$ ion implantation is accompanied by effective sputtering of the Ge surface.
Received: 03.04.2017
DOI:
10.21883/PJTF.2018.08.45971.16808
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