M. N. Drozdov, Yu. N. Drozdov, A. V. Novikov, P. A. Yunin, D. V. Yurasov, “A new limitation of the depth resolution in tof-sims elemental profiling: the influence of a probing ion beam”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2018, Volume 44, Issue 8,Pages <nobr>11

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A new limitation of the depth resolution in tof-sims elemental profiling: the influence of a probing ion beam

M. N. Drozdov^a, Yu. N. Drozdov^a, A. V. Novikov^ab, P. A. Yunin^ab, D. V. Yurasov^a

^a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
^b National Research Lobachevsky State University of Nizhny Novgorod

Abstract: New data concerning the influence of a probing beam of bismuth ions on the depth resolution in elemental depth profiling by secondary ion mass spectrometry (SIMS) have been obtained on a TOF.SIMS-5 system using the principle of two separate ion beams. It is established that the existing criterion of nondestructive character of the probing beam, on which this principle is based, is insufficient. Additional processes must be taken into account so as to formulate a more adequate criterion. A regime of depth profiling is proposed that allows the depth resolution to be improved at low energies of sputtering ions.

Received: 30.08.2017

DOI: 10.21883/PJTF.2018.08.45961.17020