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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2018 Volume 44, Issue 9, Pages 49–57 (Mi pjtf5818)

This article is cited in 2 papers

Current-oscillation power growth in a semiconductor superlattice with regard to interminiband tunneling

A. O. Selskii

Saratov State University

Abstract: The total power of oscillations of current flowing through a semiconductor superlattice with different gaps between the first and second minibands is discussed. It is demonstrated that, with a decrease in the band gap, i.e., with an increase in the probability of interminiband tunneling, the total current-oscillation power increases when certain voltages are applied to the superlattice.

Received: 29.09.2017

DOI: 10.21883/PJTF.2018.09.46065.17062


 English version:
Technical Physics Letters, 2018, 44:5, 388–391

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© Steklov Math. Inst. of RAS, 2026