This article is cited in 8 papers

Low-energy defectless dry etching of the AlGaN/AlN/GaN HEMT barrier layer

S. V. Mikhailovich, A. Yu. Pavlov, K. N. Tomosh, Yu. V. Fedorov

Institute of Ultra High Frequency Semiconductor Electronics of RAS, Moscow

Abstract: A method of defectless dry etching of an AlGaN barrier layer is proposed, which consists in repeated plasmachemical oxidation of AlGaN and removal of the oxide layer by means of reactive ion etching in inductively coupled BCl$_3$ plasma. Using the proposed etching technology, AlGaN/AlN/GaN high-electron-mobility transistors (HEMTs) with a buried gate have been successfully fabricated for the first time. It is shown that the currents of obtained HEMTs are independent of the number of etching cycles, while the gate operating point shifts toward positive voltages up to obtaining transistors operating in the enhancement mode.

Received: 29.01.2018

DOI: 10.21883/PJTF.2018.10.46100.17227

 English version: Technical Physics Letters, 2018, 44:5, 435–437

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