R. I. Romanov, V. Yu. Fominskiy, P. V. Zinin, I. A. Trojan, D. V. Fominski, P. S. Dzhumaev, V. P. Filonenko, “The effect of boron on the structure and conductivity of thin films obtained by laser ablation of diamond with deposition at 700<nobr>$^\circ$</nobr>C”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2018, Volume 44, Issue 12,Pages <nobr>16

This article is cited in 5 papers

The effect of boron on the structure and conductivity of thin films obtained by laser ablation of diamond with deposition at 700$^\circ$C

R. I. Romanov^a, V. Yu. Fominskiy^a, P. V. Zinin^b, I. A. Trojan^c, D. V. Fominski^a, P. S. Dzhumaev^a, V. P. Filonenko^d

^a National Engineering Physics Institute "MEPhI", Moscow
^b Scientific and Technological Centre of Unique Instrumentation, Russian Academy of Sciences, Moscow, Russia
^c Crystallography and Photonics Federal Scientific Research Center, Russian Academy of Sciences, Moscow, Russia
^d Institute for High Pressure Physics, Russian Academy of Sciences, Troitsk, Moscow, Russia

Abstract: Structural features of CB$_ x$ films obtained by pulsed laser ablation of targets made of pressed diamond powder with boron-powder additions at B/C atomic ratio of $x$ = 0.33 have been studied. The films were deposited on heated substrates, so that diffusion processes involving C and B atoms on the surface and in the volume of films were possible. Selected conditions of film deposition ensured their effective doping with boron (0.4 $\le x \le$ 0.6). The incorporation of B atoms was accompanied by the formation of B–C chemical bonds, whereas the formation of $sp^2$ graphite bonds and their ordering in clusters with laminar packing was suppressed. The films possessed very low resistivity ($\sim$1.4 m $\Omega$ cm) at room temperature and exhibited metallic type of conductance on decreasing the temperature to 77 K.

Received: 02.03.2018

DOI: 10.21883/PJTF.2018.12.46286.17275