X-ray diffraction analysis of epitaxial layers with the properties of a dislocation filter

I. D. Loshkarev, A. P. Vasilenko, E. M. Trukhanov, A. V. Kolesnikov, M. O. Petrushkov, M. A. Putyato

Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk

Abstract: An approach to instant testing of epitaxial films with a sharp decrease in the threading dislocation density is proposed. High-resolution X-ray diffractometry, including reciprocal space mapping, has been used. The structure of GaAs/Si(001) heterosystems with low-temperature GaAs layers has been analyzed. A decrease in the density of threading dislocations in the GaAs film with the formation of a small-angle boundary has been detected.

Received: 18.12.2017

DOI: 10.21883/PJTF.2018.13.46323.17160

 English version: Technical Physics Letters, 2018, 44:7, 562–565

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