V. S. Kalinovskii, E. I. Terukov, E. V. Kontrosh, V. N. Verbitskii, A. S. Titov, “Radiation resistance of $\alpha$-Si:H/Si heterojunction solar cells with a thin $i$-$\alpha$-Si:H inner layer”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2018, Volume 44, Issue 17,Pages 95

This article is cited in 7 papers

Radiation resistance of $\alpha$-Si:H/Si heterojunction solar cells with a thin $i$-$\alpha$-Si:H inner layer

V. S. Kalinovskii^a, E. I. Terukov^ab, E. V. Kontrosh^a, V. N. Verbitskii^a, A. S. Titov^ab

^a Ioffe Institute, St. Petersburg
^b Scientific Technical Center of Thin-Film Technology in Power Engineering, Ioffe Physical Technical Institute, Russian Academy of Sciences, St. Petersburg, Russia

Abstract: We have studied the degradation of photoelectric characteristics of heterojunction solar cell samples based on $\alpha$-Si:H/Si structures upon irradiation by electrons with an energy of 3.8 MeV and fluences of 1 $\times$ 10$^{12}$–1 $\times$ 10$^{14}$ cm$^{-2}$. It is shown that the efficiency of the samples of heterojunction solar cell elements under the conditions of AM0 illumination (0.136 W/cm$^2$) is reduced by 25% at a fluence of 2 $\times$ 10$^{13}$ cm$^{-2}$. This is more than an order of magnitude higher than the critical fluence value achieved previously when silicon solar cells with a $p$–$n$ junction and an $n$-type base were irradiated by high-energy electrons.

Received: 12.03.2018

DOI: 10.21883/PJTF.2018.17.46576.17283