This article is cited in 1 paper

Specific features of the luminescence of ZnO : Te/GaN/Al$_{2}$O$_{3}$ heterostructures

A. M. Bagamadova, A. Sh. Asvarov, A. K. Omaev, M. E. Zobov

Daghestan Institute of Physics after Amirkhanov, Makhachkala, Russia

Abstract: High-quality heteroepitaxial (0001)ZnO : Te/(0001)GaN/(0001)Аl$_{2}$O$_{3}$ structures have been grown by hydrogen vapor-phase epitaxy in a low-pressure continuous flow reactor. X-ray diffraction analysis of these heterostructures has been carried out, which revealed the high structural quality of thin zinc oxide layers. The surface morphology and specific features of UV photoluminescence of the ZnO/GaN/Аl$_{2}$O$_{3}$ heterostructure have been analyzed.

Received: 03.07.2018

DOI: 10.21883/PJTF.2018.24.47030.17446

 English version: Technical Physics Letters, 2018, 44:12, 1142–1144

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