I. B. Chistokhin, M. S. Aksenov, N. A. Valisheva, D. V. Dmitriev, I. V. Marchishin, A. I. Toropov, K. S. Zhuravlev, “The influence of the InAlAs layer surface morphology on the temperature dependence of parameters of Au/Ti/<nobr>$n$</nobr>-InAlAs (001) Schottky diodes”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2019, Volume 45, Issue 4,Pages <nobr>59

This article is cited in 2 papers

The influence of the InAlAs layer surface morphology on the temperature dependence of parameters of Au/Ti/$n$-InAlAs (001) Schottky diodes

I. B. Chistokhin^a, M. S. Aksenov^ab, N. A. Valisheva^a, D. V. Dmitriev^a, I. V. Marchishin^a, A. I. Toropov^a, K. S. Zhuravlev^ab

^a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
^b Novosibirsk State University

Abstract: Growth-related structural defects present on the surface of InAlAs layers grown by molecular beam epitaxy on InP(001) substrates influence the temperature dependences of the current–voltage characteristics of Au/Ti/InAlAs Schottky barriers. It is established that these defects in the form of pits cause the appearance of regions with reduced barrier height. At a surface density of $\ge$ 10$^7$ cm$^{-2}$, these defects significantly influence the parameters of the Schottky barriers at temperatures below 200 K.

Received: 27.11.2018
Revised: 27.11.2018
Accepted: 30.11.2018

DOI: 10.21883/PJTF.2019.04.47342.17609