This article is cited in 12 papers

A study of the effect of radiation on recombination loss in heterojunction solar cells based on single-crystal silicon

I. E. Panaiotti^a, E. I. Terukov<sup>bc

a</sup> Ioffe Institute, St. Petersburg
^b Saint Petersburg Electrotechnical University "LETI"
^c R&D Center TFTE, St.-Petersburg

Abstract: A method has been developed for numerically estimating the recombination loss in silicon heterojunction solar cells under irradiation. The calculations are based on an analysis of the experimental short-circuit currents. The suggested model makes it possible to evaluate the degree of degradation of semiconductor structures by calculating the decrease in the bulk lifetime and in the diffusion length of carriers. The results obtained are of practical importance for examining the possibility of using this type of solar cells in space conditions.

Received: 28.11.2018
Revised: 28.11.2018
Accepted: 05.12.2018

DOI: 10.21883/PJTF.2019.05.47388.17612

 English version: Technical Physics Letters, 2019, 45:3, 193–196

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