This article is cited in 5 papers

Cathodoluminescence of TiO$_{2}$ films formed by molecular layer deposition

A. P. Baraban, A. A. Selivanov, V. A. Dmitriev, A. V. Drozd, V. E. Drozd

Saint Petersburg State University

Abstract: Use of the method of local cathodoluminescence in Si–TiO$_2$ and Si–SiO$_2$–TiO$_2$ structures helps to elucidate the nature of centers influencing the operation of memristors. These measurements showed that electroforming leads to the appearance of luminescence in a 250–400 nm wavelength range in the external part of TiO$_{2}$ layer characterized by high concentration of defects. This observation leads to a conclusion that a sharp interface is formed between dielectric layers of the structure, provides estimation of the absorption coefficient of TiO$_{2}$ layer, and allows its bandgap width ($\sim$3.3 eV) to be evaluated for the oxide layers formed by the given technology.

Received: 11.12.2018
Revised: 11.12.2018
Accepted: 17.12.2018

DOI: 10.21883/PJTF.2019.06.47491.17637

 English version: Technical Physics Letters, 2019, 45:3, 256–258

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