Abstract:
The effect of the formation of thin films of nickel silicides on the migration of intrinsic $p$-type impurities in silicon was studied for the first time. It was found that bulk resistance $\rho_v$ of a single Si crystal increases by a factor of 3–4 if a NiSi$_{2}$ film with thickness
$\theta\ge$ 50–100 $\mathring{\mathrm{A}}$ forms on its surface. This is attributable to the migration of boron atoms toward the silicide film. The Si layer thickness enabling measurable boron migration was estimated at 800–1000 $\mathring{\mathrm{A}}$.
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