This article is cited in 1 paper

Photoselectivity of optical sensors based on transition metal dichalcogenides: the effect of thickness on their spectral characteristics

A. Yu. Avdizhiyan, S. D. Lavrov, A. V. Kudryavtsev, A. P. Shestakova, M. V. Vasina

MIREA — Russian Technological University, Moscow

Abstract: Prototype field-effect transistors based on solid solutions of transition metal dichalcogenides (TMDs) have been manufactured, and their spectral characteristics were studied using the photocurrent spectroscopy technique. Results of theoretical estimation of the total optical absorbance of two-dimensional (2D) TMD-based semiconductors of various thicknesses are presented as dependent on the light wavelength with allowance for the multiray interference. It is established that the interference effect significantly contributes to the resulting shapes of spectral characteristics of these optical sensors with variable thickness of TMD-based photosensitive layers.

Keywords: two-dimensional semiconductors, spectroscopy, transition metal dichalcogenides, linear optics.

Received: 07.03.2019
Revised: 20.03.2019
Accepted: 20.03.2019

DOI: 10.21883/PJTF.2019.12.47918.17773

 English version: Technical Physics Letters, 2019, 45:6, 625–627

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