P. A. Bokhan, K. S. Zhuravlev, D. È. Zakrevskii, T. V. Malin, I. V. Osinnykh, N. V. Fateev, “Optical gain in heavily doped Al$_{x}$Ga$_{1-x}$N : Si structures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2019, Volume 45, Issue 18,Pages 48

This article is cited in 2 papers

Optical gain in heavily doped Al$_{x}$Ga$_{1-x}$N : Si structures

P. A. Bokhan^a, K. S. Zhuravlev^ab, D. È. Zakrevskii^a, T. V. Malin^a, I. V. Osinnykh^a, N. V. Fateev^a

^a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
^b Novosibirsk State University

Abstract: Gain characteristics of heavily doped Al$_{x}$Ga$_{1-x}$N : Si structures with c $x$ = 0.65 and 0.74 have been studied under pulsed optical pumping by Nd:YAG laser radiation at wavelength $\lambda$ = 266 nm. The absolute values of the optical gain measured at spectral maximum of the room-temperature luminescence spectrum reach (0.5 – 6) $\times$ 10$^3$ сm$^{-1}$ at an pumping power density of 8–600 kW/cm$^2$. Cross sections of the radiative and donor–acceptor recombination are close to each other and exceed 10$^{16}$ cm$^2$.

Keywords: heavily doped structures, Al$_{x}$Ga$_{1-x}$N/AlN, gain characteristics.

Received: 27.05.2019
Revised: 27.05.2019
Accepted: 13.06.2019

DOI: 10.21883/PJTF.2019.18.48239.17894