Deep 3D X-ray lithography based on high-contrast resist layers

V. P. Naz'mov

G I. Budker Institute of Nuclear Physics, Siberian Branch of the Russian Academy of Sciences, Novosibirsk

Abstract: In classical X-ray lithography, the mask and resist layer are arranged perpendicular to the incident X-ray beam. Being absorbed in the resist layer, the X-ray beam induces a response in the form corresponding to its cross section. However, using a tilt and rotation of the mask/resist and sequential repeated exposures, it is possible to create three-dimensional forms that are accurate to within less than a micron. New approaches to the creation of 3D microstructures by deep X-ray lithography are described, which can ensure the formation of relatively large arrays.

Keywords: X-ray lithography, double irradiation, contrast.

Received: 17.05.2019
Revised: 27.05.2019
Accepted: 03.06.2019

DOI: 10.21883/PJTF.2019.18.48227.17879

 English version: Technical Physics Letters, 2019, 45:9, 906–908

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