This article is cited in 2 papers

Epitaxial growth of zinc sulfide by atomic layer deposition on SiC/Si hybrid substrates

V. V. Antipov^a, S. A. Kukushkin^b, A. V. Osipov<sup>c

a</sup> State Technological Institute of St. Petersburg (Technical University)
^b St. Petersburg National Research University of Information Technologies, Mechanics and Optics
^c Institute of Problems of Mechanical Engineering, Russian Academy of Sciences, St. Petersburg

Abstract: Epitaxial films of zinc sulfide on silicon were obtained by atomic layer deposition (ALD). In order to avoid the interaction between silicon and zinc sulfide, a high-quality buffer layer of silicon carbide $\sim$100 nm in thickness was previously synthesized on the surface of silicon by chemical substitution of atoms. High-energy electron diffraction showed that ZnS layers are epitaxial. It is proved by ellipsometric methods that the grown ZnS layers are transparent in the photon energy region up to 3 eV, which is crucial for applications in optoelectronics.

Keywords: wide-gap semiconductors, zinc sulfide, silicon carbide, molecular layering.

Received: 01.07.2019
Revised: 01.07.2019
Accepted: 08.07.2019

DOI: 10.21883/PJTF.2019.21.48465.17957

 English version: Technical Physics Letters, 2019, 45:11, 1075–1077

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