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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2019 Volume 45, Issue 23, Pages 47–50 (Mi pjtf5256)

Specific features of current–voltage characteristics of field-effect transistors with active layers based on composite films of semiconductor polymers with nanoparticles of inorganic perovskites

E. V. Ostroumova, A. N. Aleshin

Ioffe Institute, St. Petersburg

Abstract: Current–voltage characteristics of composite field-effect transistors with active layers based on inorganic perovskites, nanocrystals of cesium halides CsPbBr$_{3}$, embedded into the matrix of a semiconductor polymer PFO (PFO:CsPbBr$_{3}$) have been analyzed. An increase in current gain $\beta$ in current–voltage characteristics of structures of this kind with increasing negative gate voltage was found and considered. It was shown that, if there is additional injection of minority carriers from electrodes into the transistor channel, composite light-emitting field-effect transistors with improved characteristics can be developed.

Keywords: conducting polymers, nanocrystals of perovskites, field-effect transistors.

Received: 14.06.2019
Revised: 14.06.2019
Accepted: 04.09.2019

DOI: 10.21883/PJTF.2019.23.48720.17929


 English version:
Technical Physics Letters, 2019, 45:12, 1212–1215

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© Steklov Math. Inst. of RAS, 2026