This article is cited in 3 papers

AlInSb/InSb heterostructures for IR photodetectors grown by molecular-beam epitaxy

M. A. Sukhanov^ab, A. K. Bakarov^ab, D. Yu. Protasov^ac, K. S. Zhuravlev<sup>ab

a</sup> Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
^b Novosibirsk State University
^c Novosibirsk State Technical University

Abstract: A photodetector heterostructure based on AlInSb/InSb was grown by molecular-beam epitaxy. Mesostructures of different diameters were fabricated. The temperature dependence of the dark current was measured. It was demonstrated that the built-in barrier blocks the flow of majority charge carriers, thus reducing the dark-current density (relative to that for a $pin$ structure based on InSb). The measured dependence of the dark current on the mesostructure size revealed that the bulk current component prevails over the surface one.

Keywords: InSb, nBn detector, dark current, molecular-beam epitaxy, IR photodetector.

Received: 30.09.2019
Revised: 30.10.2019
Accepted: 31.10.2019

DOI: 10.21883/PJTF.2020.04.49040.18055

 English version: Technical Physics Letters, 2020, 46:2, 154–157

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