This article is cited in 8 papers

Influence of the proton irradiation temperature on the characteristics of high-power high-voltage silicon carbide Schottky diodes

V. V. Kozlovsky^a, O. Korolkov^b, K. S. Davydovskaja^c, A. A. Lebedev^c, M. E. Levinshteĭn^c, N. Sleptsuk^b, A. M. Strel'chuk^c, J. Toompuu<sup>b

a</sup> Peter the Great St. Petersburg Polytechnic University
^b Tallinn University of Technology, Tallinn, Estonia
^c Ioffe Institute, St. Petersburg

Abstract: For the first time, the effect of irradiation at high temperature (“hot irradiation”) by protons on the capacitance – voltage and current – voltage characteristics of silicon carbide based semiconductor devices was studied. We investigated commercial high-voltage (blocking voltage of 1700 V) integrated 4$H$-SiC Schottky diodes. Irradiation was carried out by protons with an energy of 15 MeV at temperatures of 20–400$^{\circ}$C. It has been established that the most sensitive to radiation parameter determining the radiation resistance of devices is the ohmic resistance of the base, which increases monotonically with increasing radiation dose $D$. It is shown that during “hot” irradiation, the radiation resistance of diodes significantly exceeds the resistance of diodes in low-temperature (“cold”) irradiation . It was concluded that, with increasing irradiation temperature, the rate of formation of deep centers in the upper half of the band gap of silicon carbide decreases.

Keywords: silicon carbide, Schottky diode, proton irradiation, radiation defects.

Received: 14.10.2019
Revised: 14.10.2019
Accepted: 19.12.2019

DOI: 10.21883/PJTF.2020.06.49163.18072

 English version: Technical Physics Letters, 2020, 46:3, 287–289

Bibliographic databases:

•