This article is cited in 4 papers

Structural perfection and composition of gallium-doped thermomigration silicon layers

A. A. Lomov^a, B. M. Seredin^b, S. Yu. Martyushov^c, A. N. Zaichenko^b, S. G. Simakin^d, I. L. Shul'pina<sup>e

a</sup> Insitute of Physics and Technology, Institution of Russian Academy of Sciences, Moscow
^b South-Russian State Polytechnic University named M. I. Platov
^c Technological Institute for Superhard and Novel Carbon Materials, Troitsk, Moscow
^d Yaroslavl branch of the Institute of physics and technology, Institution of Russian academy of sciences
^e Ioffe Institute, St. Petersburg

Abstract: A technique that allows one to form thick thermomigration silicon layers heavily doped with gallium for prospective power electronic devices is proposed. The dependences of the perfection of structure and the composition of the layers on the temperature of their formation were studied by the methods of X-ray topography, X-ray reflection curves, and secondary-ion mass spectrometry. It is established that the formed layers are single-crystal layers and do not contain misfit dislocations at the interface with the silicon substrate. It is shown that the concentration of gallium in the layers can be varied in the range of (1.6–4.8) $\times$ 10$^{19}$ cm$^{-3}$, which is higher than the concentration achieved in the case in which silicon is doped with aluminum.

Keywords: thermomigration, silicon, gallium, dislocations, X-ray, diffraction, secondary-ion mass spectrometry.

Received: 13.12.2019
Revised: 13.12.2019
Accepted: 17.12.2019

DOI: 10.21883/PJTF.2020.06.49161.18153

 English version: Technical Physics Letters, 2020, 46:3, 279–282

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