This article is cited in 1 paper

The influence of interfacial effects on the electron spectrum of GaAs/AlGaAs structures used for the creation of MID-IR photodetectors

V. S. Krivobok^a, D. A. Pashkeev^ab, D. A. Litvinov^a, L. N. Grigor'eva^ac, S. A. Kolosov<sup>a

a</sup> P. N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow
^b ORION Research and Production Enterprise, Moscow, Russia
^c Lomonosov Moscow State University

Abstract: It is shown that transient processes arising in the growth chamber of a molecular beam epitaxy (MBE) system influence the structure of interfaces and electron spectrum of quantum wells in GaAs/Al$_{x}$Ga$_{1-x}$As heterostructures used for the creation of photodetectors (PDs) operating in the mid-IR range. These processes lead to a low-frequency shift of the PD operating transition, appearance of interband transition lines (forbidden by selection rules) in the absorption spectrum, and decrease in the energy shift between quantum-confinement levels formed by light and heavy holes. These effects provide a simple approach to contactless evaluation of the quality of interfaces in GaAs/Al$_{x}$Ga$_{1-x}$As heterostructures for PDs.

Keywords: IR detector, heterostructure, quantum well, low temperature photoluminescence.

Received: 22.11.2019
Revised: 22.11.2019
Accepted: 09.12.2019

DOI: 10.21883/PJTF.2020.06.49155.18130

 English version: Technical Physics Letters, 2020, 46:3, 256–259

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