Abstract:
In this paper, we examine the issues of the formation and propagation of melted zones during electric explosion of thin aluminum films on the oxidized silicon surface. A difference in the formation and propagation mechanisms of melted zones on the surface during the passage of a current pulse and after it was switched off is found. After the current pulse is switched off, the migration of melted zones is revealed to be determined by the temperature gradient near a local heat source. The temperature gradients are obtained from the dimensional dependence of the displacement rate, and the thermoelasticity coefficient that determines the dynamics of zone migration in the temperature gradient field is estimated.
Keywords:electric explosion, thin films, temperature gradient, semiconductor structure.
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