A. V. Kolchin, D. V. Shuleiko, A. V. Pavlikov, S. V. Zabotnov, L. A. Golovan, D. E. Presnov, V. A. Volodin, G. K. Krivyakin, A. A. Popov, P. K. Kashkarov, “Femtosecond laser annealing of multilayer thin-film structures based on amorphous germanium and silicon”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2020, Volume 46, Issue 11,Pages <nobr>43

This article is cited in 8 papers

Femtosecond laser annealing of multilayer thin-film structures based on amorphous germanium and silicon

A. V. Kolchin^a, D. V. Shuleiko^a, A. V. Pavlikov^ab, S. V. Zabotnov^ab, L. A. Golovan^a, D. E. Presnov^acd, V. A. Volodin^ef, G. K. Krivyakin^ef, A. A. Popov^g, P. K. Kashkarov^ab

^a Lomonosov Moscow State University
^b National Research Centre "Kurchatov Institute", Moscow
^c Lomonosov Moscow State University, Skobeltsyn Institute of Nuclear Physics
^d Quantum Technology Center of M. V. Lomonosov Moscow State University
^e Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
^f Novosibirsk State University
^g Yaroslavl branch of the Institute of physics and technology, Institution of Russian academy of sciences

Abstract: Femtosecond laser annealing of thin-film multilayered structures based on amorphous silicon and germanium were studied. The original samples were synthesized via plasma-enhanced deposition on glass substrate. Scanning electron microscopy revealed formation of periodic surface structures in the irradiated films. Raman spectra analysis revealed crystallization of amorphous germanium as a result of femtosecond laser pulses action, as well as fluence-dependent mixture of the germanium and silicon layers at absence of crystallization of the amorphous silicon layers.

Keywords: pulsed laser annealing, thin-film silicon and germanium structures, scanning electron microscopy, Raman scattering.

Received: 09.01.2020
Revised: 16.03.2020
Accepted: 16.03.2020

DOI: 10.21883/PJTF.2020.11.49499.18201