A. M. Gorbachev, M. A. Lobaev, D. B. Radishev, A. L. Vikharev, S. A. Bogdanov, S. V. Bolshedvorskii, A. I. Zeleneev, V. V. Soshenko, A. V. Akimov, M. N. Drozdov, V. A. Isaev, “Formation of multilayered nanostructures of NV sites in single-crystal CVD diamond”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2020, Volume 46, Issue 13,Pages <nobr>19

This article is cited in 1 paper

Formation of multilayered nanostructures of NV sites in single-crystal CVD diamond

A. M. Gorbachev^a, M. A. Lobaev^a, D. B. Radishev^a, A. L. Vikharev^a, S. A. Bogdanov^a, S. V. Bolshedvorskii^ab, A. I. Zeleneev^bc, V. V. Soshenko^ab, A. V. Akimov^bd, M. N. Drozdov^e, V. A. Isaev^a

^a Federal Research Center The Institute of Applied Physics of the Russian Academy of Sciences, Nizhny Novgorod
^b P. N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow
^c Moscow Institute of Physics and Technology (National Research University), Dolgoprudny, Moscow Region
^d Russian Quantum Center, Skolkovo, Moscow
^e Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod

Abstract: The results of growing multilayered nitrogen-doped nanostructures that have the form of periodically arranged nanometer-thick nitrogen-containing layers in a single-crystal CVD diamond are presented. The possibility of creating nitrogen-doped diamond layers with extremely sharp boundaries (less than 1 nm) is demonstrated. The photoluminescence study have shown that multilayered structures make it possible to obtain a higher radiation intensity of practically important NV$^-$ sites at a spin coherence time close to that for uniformly doped layers with the same concentration of nitrogen.

Keywords: NV centers in diamond, CVD diamond growth, photoluminescence, doped diamond.

Received: 20.03.2020
Revised: 20.03.2020
Accepted: 01.04.2020

DOI: 10.21883/PJTF.2020.13.49585.18299