This article is cited in 1 paper

A TEM study of AlN–AlGaN–GaN multilayer buffer structures on silicon substrates

A. V. Myasoedov, A. V. Sakharov, A. E. Nikolaev, A. E. Kalmykov, L. M. Sorokin, V. V. Lundin

Ioffe Institute, St. Petersburg

Abstract: By transmission electron microscopy are studied two buffer structures based on AlGaN alloys doped with silicon and don't. The structures were grown on (111) orientated Si substrates by metal-organic vapour-phase epitaxy with consistently decreasing Al content. It is found that noticeable threading dislocation density reduction took place in intermediate layers at changing Al concentration from 32 to 23%. A phase decay and a composition modulation in growth direction in AlGaN layers with Al content 32, 23, 12 and 4% are observed. A model of the layers structure in the composition modulation area is proposed.

Keywords: threading dislocations, transmission electron microscopy, metalorganic vapour-phase epitaxy, compositional modulation.

Received: 08.07.2020
Revised: 08.07.2020
Accepted: 10.07.2020

DOI: 10.21883/PJTF.2020.19.50047.18457

 English version: Technical Physics Letters, 2020, 46:10, 991–995

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