Abstract:
The influence of gettering conditions in high resistivity silicon during the PIN photodiode fabrication process on the reverse dark currents has been studied. It was demonstrated that the getter formation of backside substrate by a combination of phosphorus ion implantation and deposition of polysilicon film followed by phosphorus doping at the temperatures below 900$^\circ$C results in reduction of reverse dark current value and increasing of nonequilibrium carrier lifetime.
Keywords:gettering, PIN photodiode, high resistivity silicon, dark currents.
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