S. A. Kukushkin, A. V. Osipov, A. I. Romanychev, I. A. Kasatkin, A. S. Loshachenko, “Low-temperature growth of the CdS cubic phase by atomic-layer deposition on SiC/Si hybrid substrates”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2020, Volume 46, Issue 21,Pages <nobr>3

This article is cited in 3 papers

Low-temperature growth of the CdS cubic phase by atomic-layer deposition on SiC/Si hybrid substrates

S. A. Kukushkin^ab, A. V. Osipov^a, A. I. Romanychev^c, I. A. Kasatkin^c, A. S. Loshachenko^c

^a Institute of Problems of Mechanical Engineering, Russian Academy of Sciences, St. Petersburg
^b Peter the Great St. Petersburg Polytechnic University
^c Saint Petersburg State University

Abstract: A new method has been developed for the epitaxial growth of cadmium sulfide CdS films in a metastable cubic phase on silicon substrates with a buffer layer of epitaxial silicon carbide by atomic layer deposition. This CdS phase is achieved due to the low growth temperature ($\sim$180$^\circ$). The cubic phase was identified by both X-ray diffraction (XRD) and spectral ellipsometry due to the fact that the main peak of CdS absorption is split into two peaks in the hexagonal phase (4.9 eV and 5.4 eV) and is a singlet in the cubic phase (5.1 eV).

Keywords: cadmium sulfide, silicon carbide, heterostructures, atomic layer deposition, dielectric constant, ellipsometry.

Received: 14.07.2020
Revised: 14.07.2020
Accepted: 22.07.2020

DOI: 10.21883/PJTF.2020.21.50186.18466