S. A. Kukushkin, A. V. Osipov, “The optical properties, energy band structure, and interfacial conductance of a 3<nobr>$C$</nobr>-SiC(111)/Si(111) heterostructure grown by the method of atomic substitution”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2020, Volume 46, Issue 22,Pages <nobr>3

This article is cited in 9 papers

The optical properties, energy band structure, and interfacial conductance of a 3$C$-SiC(111)/Si(111) heterostructure grown by the method of atomic substitution

S. A. Kukushkin^ab, A. V. Osipov^a

^a Institute of Problems of Mechanical Engineering, Russian Academy of Sciences, St. Petersburg
^b Peter the Great St. Petersburg Polytechnic University

Abstract: Epitaxial films of single-crystalline silicon carbide (3$C$-SiC cubic polytype) with 20- to 120-nm thickness grown on a silicon substrate by the method of atomic substitution have been studied by the spectroscopic ellipsometry technique at 0.5–9.3 eV photon energies. It is established that the dielectric permittivity of a thin intermediate layer formed at the 3$C$-SiC(111)/Si(111) interface is characteristic of a semimetal. This result was confirmed by quantum-chemical simulation of the properties of 3$C$-SiC(111)/Si(111) heterointerface, showing that the conductance of this intermediate layer is related to $p$-electrons of interfacial Si atoms that are most remote from Si atoms of the substrate.

Keywords: silicon carbide, heterostructures, interface, dielectric function, ellipsometry, semimetals.

Received: 29.06.2020
Revised: 29.06.2020
Accepted: 26.07.2020

DOI: 10.21883/PJTF.2020.22.50298.18439