This article is cited in 1 paper

Influence of surface curvature on silicon sputtering by low-energy Ar ions

A. A. Sycheva

Lomonosov Moscow State University, Skobeltsyn Institute of Nuclear Physics

Abstract: Molecular dynamics (MD) method was used to study 200 eV Ar ion impact on silicon nanoparticles of various sizes. Based on the MD simulations, the analysis of sputtering mechanisms and differences in the ion energy deposition which are determined by the curvature of the target surface, is performed in the paper.

Keywords: physical sputtering, simulation, molecular dynamics, mechanism, surface curvature.

Received: 15.06.2020
Revised: 18.08.2020
Accepted: 19.08.2020

DOI: 10.21883/PJTF.2020.23.50345.18423

 English version: Technical Physics Letters, 2020, 46:12, 1184–1187

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