This article is cited in 1 paper

AlSb/InAs heterostructures for microwave transistors

M. A. Sukhanov^a, A. K. Bakarov^ab, K. S. Zhuravlev<sup>ab

a</sup> Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
^b Novosibirsk State University

Abstract: Features of the molecular beam epitaxy growth of the AlSb/InAs heterostructures with a high-mobility two-dimensional electron gas for microwave transistors with ultralow power consumption are described. The main stages of fabrication of the transistors based on the AlSb/InAs heterostructures are outlined. The drain and drain–gate characteristics of the transistors are reported and discussed.

Keywords: AlSb/InAs heterostructures, molecular beam epitaxy, high electron mobility transistor.

Received: 16.10.2020
Revised: 25.10.2020
Accepted: 25.10.2020

DOI: 10.21883/PJTF.2021.03.50574.18588

 English version: Technical Physics Letters, 2021, 47:2, 139–142

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