The effect of As$^+$ ion implantation and annealing on the electrical properties of near-surface layers in graded-gap $n$-Hg$_{0.78}$Cd$_{0.22}$Te films

A. V. Voitsekhovskii^a, S. N. Nesmelov^a, S. M. Dzyadukh^a, V. S. Varavin^b, S. A. Dvoretskii^ab, N. N. Mikhailov^ba, G. Yu. Sidorov^ab, M. V. Yakushev^b, D. V. Marin<sup>b

a</sup> Tomsk State University
^b Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk

Abstract: Films of $n$-Hg$_{0.78}$Cd$_{0.22}$Te with near-surface wide-gap layers were grown by molecular beam epitaxy on Si (013) substrates. To measure the admittance, metal – insulator – semiconductor (MIS) structures were fabricated on the basis of the as-grown HgCdTe film, films after implantation, and films after implantation and annealing. Using techniques that take into account the presence of graded-gap layers and slow interface states, the main parameters of the near-surface layers of HgCdTe films have been determined after the technological procedures used to create photodiodes.

Keywords: Hg$_{0.78}$Cd$_{0.22}$Te, molecular beam epitaxy, ion implantation, MIS structure, admittance.

Received: 28.10.2020
Revised: 07.11.2020
Accepted: 28.10.2020

DOI: 10.21883/PJTF.2021.04.50643.18605

 English version: Technical Physics Letters, 2021, 47:2, 189–192

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