A. V. Solnyshkin, O. N. Sergeeva, O. A. Shustova, Sh. Sh. Sharofidinov, M. V. Staritsyn, E. Yu. Kaptelov, S. A. Kukushkin, I. P. Pronin, “Dielectric and pyroelectric properties of composites based on aluminum and gallium nitrides grown by chloride-hydride epitaxy on a silicon carbide-on-silicon substrate”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2021, Volume 47, Issue 9,Pages <nobr>7

This article is cited in 5 papers

Dielectric and pyroelectric properties of composites based on aluminum and gallium nitrides grown by chloride-hydride epitaxy on a silicon carbide-on-silicon substrate

A. V. Solnyshkin^a, O. N. Sergeeva^a, O. A. Shustova^a, Sh. Sh. Sharofidinov^bc, M. V. Staritsyn^d, E. Yu. Kaptelov^b, S. A. Kukushkin^c, I. P. Pronin^b

^a Tver State University
^b Ioffe Institute, St. Petersburg
^c Institute of Problems of Mechanical Engineering, Russian Academy of Sciences, St. Petersburg
^d Prometei Central Research Institute of Structural Materials, St. Petersburg

Abstract: We studied the microstructure and the dielectric and pyroelectric properties of Al$_{x}$Ga$_{1-x}$N composite epitaxial layers grown on SiC/Si(111) substrates by chloride-hydride epitaxy. The phenomenon of spontaneous (in the process of layer growth) formation of a system of heterojunctions was discovered. We obtained a material based on Al$_{x}$Ga$_{1-x}$N epitaxial layers, which currently has one of the highest pyroelectric coefficients for crystals (or thin films) of aluminum nitride.

Keywords: aluminum nitride, gallium nitride, solid solutions of aluminum and gallium nitrides, silicon carbide on silicon, chloride-hydride epitaxy, dielectric properties, pyroelectric properties.

Received: 28.12.2020
Revised: 28.12.2020
Accepted: 26.01.2021

DOI: 10.21883/PJTF.2021.09.50898.18673