M. S. Aksenov, N. A. Valisheva, A. P. Kovchavtsev, “The effect of fluorine on the density of states at the anodic oxide layer/In$_{0.53}$Ga$_{0.47}$As interface”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2021, Volume 47, Issue 10,Pages 11

The effect of fluorine on the density of states at the anodic oxide layer/In$_{0.53}$Ga$_{0.47}$As interface

M. S. Aksenov^ab, N. A. Valisheva^a, A. P. Kovchavtsev^a

^a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
^b Novosibirsk State University

Abstract: It is shown that the fluorine-containing anodic layers on the $n$-In$_{0.53}$Ga$_{0.47}$As surface, in contrast to the anodic layers without fluorine, form a SiO$_2$/InGaAs interface with an unpinned Fermi level, the state density on which decreases during annealing at a temperature of 300$^{\circ}$C to values (2 – 4) $\times$ 10$^{11}$ and (4 – 5) $\times$ 10$^{12}$ eV$^{-1}$cm$^{-2}$ near conduction band bottom and the band gap middle, respectively. An increase in the annealing temperature leads to a reverse increase in the state density (350$^\circ$С) and pinning of the Fermi level (400$^\circ$С).

Keywords: In$_{0.53}$Ga$_{0.47}$As, anodic oxide layer, fluorine, $C$–$V$ characteristics, density of interface states.

Received: 08.12.2020
Revised: 17.02.2021
Accepted: 17.02.2021

DOI: 10.21883/PJTF.2021.10.50965.18649