Abstract:
Ion synthesis of silicon-on-insulator structures based on successive implantation of oxygen ions and a glass former into silicon substrates has been investigated. Lead ions are used as a glass-former. Specific features of formation of a buried silicate layer upon postimplantation annealing are considered. Current–voltage characteristics of the synthesized structures and resistivities of the insulator and the silicon device layer are measured.
Keywords:ionic implantation, glass former, high temperature annealing, silicate insulator, current–voltage characteristic.
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