This article is cited in 4 papers

Gold-induced crystallization of thin films of amorphous silicon suboxide

N. A. Lunev^ab, A. O. Zamchiy^ab, E. A. Baranov^a, I. E. Merkulova^ab, V. O. Konstantinov^a, I. V. Korolkov^c, E. A. Maximovskiy^c, V. A. Volodin<sup>bd

a</sup> S.S. Kutateladze Institute of Thermophysics, Siberian Division of the Russian Academy of Sciences
^b Novosibirsk State University
^c Nikolaev Institute of Inorganic Chemistry, Siberian Branch of the Russian Academy of Sciences, Novosibirsk
^d Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk

Abstract: Gold-induced crystallization of amorphous silicon suboxide ($\alpha$-SiOx) has been used for the first time to obtain polycrystalline silicon (poly-Si). It is established that the annealing of a substrate/thin gold film/thin $\alpha$-SiO$_{0.2}$ film structure at 335$^\circ$C leads to the formation of poly-Si in the lower layer (on the substrate), while gold diffuses to the upper layer. As the annealing temperature is increased to 370$^\circ$C, the mechanism of poly-Si formation remains the same, but the rate of crystallization increases. Evidently, poly-Si formation proceeds via synthesis of gold silicides followed by their nearly complete decomposition to crystalline gold and silicon phases during 10-h annealing at 370$^\circ$C.

Keywords: thin films, silicon suboxide, polycrystalline silicon, gold-induced crystallization, Raman spectroscopy.

Received: 30.03.2021
Revised: 21.04.2021
Accepted: 30.03.2021

DOI: 10.21883/PJTF.2021.14.51185.18793

 English version: Technical Physics Letters, 2021, 47:10, 726–729

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