A. L. Zakhgeim, A. E. Ivanov, A. E. Chernyakov, “Features of operation of high-power AlInGaN LEDs at high pulse currents”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2021, Volume 47, Issue 16,Pages <nobr>32

This article is cited in 4 papers

Features of operation of high-power AlInGaN LEDs at high pulse currents

A. L. Zakhgeim^a, A. E. Ivanov^ab, A. E. Chernyakov^a

^a Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, St. Petersburg
^b Saint Petersburg Electrotechnical University "LETI"

Abstract: The current dependences of the power and spectral characteristics, including their distribution (mapping) over the emitting surface, of AlInGaN LEDs of a “vertical” design have been studied in a wide range of operating currents up to $\sim$70 A. It was found that, starting from a certain level of excitation, it is incorrect to use the concept of the average current density when analyzing the efficiency drop. The main factor in reducing the internal quantum efficiency and the radiation output coefficient, which limits the energy capabilities of the LED, is the effect of current crowding to the contacts.

Keywords: AlGaInN LED, quantum efficiency, emission spectrum, near-field emission.

Received: 31.03.2021
Revised: 30.04.2021
Accepted: 11.05.2021

DOI: 10.21883/PJTF.2021.16.51326.18795