V. A. Bushuev, A. P. Petrakov, “X-RAY-DIFFRACTOMETRY OF THE MODIFICATION OF THE STRUCTURE OF ION-IMPLANTED SILICON NEAR-THE-SURFACE LAYERS AFTER THE PULSE LASER ANNEALING”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 1992, Volume 18, Issue 8,Pages <nobr>77

JOURNALS // Pisma v Zhurnal Tekhnicheskoi Fiziki // Archive

Pisma v Zhurnal Tekhnicheskoi Fiziki, 1992 Volume 18, Issue 8, Pages 77–81 (Mi pjtf4283)

X-RAY-DIFFRACTOMETRY OF THE MODIFICATION OF THE STRUCTURE OF ION-IMPLANTED SILICON NEAR-THE-SURFACE LAYERS AFTER THE PULSE LASER ANNEALING

V. A. Bushuev, A. P. Petrakov

Fulltext: PDF file (428 kB)

Bibliographic databases: