Abstract:
The effect of various chemical treatments of the alloy surface on the properties of Ti–$p$-SiGe and Ni–$p$-SiGe contacts fabricated by vacuum thermal deposition at a substrate temperature of 350–400$^\circ$C has been studied. Etching under various conditions is used to form an initial surface with various surface-state densities. It is shown that an intermediate nickel germanosilicide layer is formed in nickel-based structures during thermal deposition of contacts, which has a significant effect on the current-voltage and capacitance-voltage characteristics of structures.