V. P. Kuznetsov, V. B. Shmagin, M. O. Marychev, K. E. Kudryavtsev, M. V. Kuznetsov, B. A. Andreev, A. V. Kornaukhov, O. N. Gorshkov, Z. F. Krasil'nik, “Electroluminescence at a wavelength of 1.5 <nobr>$\mu$</nobr>m in Si:Er/Si diode structures doped with Al, Ga, and B acceptors”, Fizika i Tekhnika Poluprovodnikov, 2010, Volume 44, Issue 12,Pages <nobr>1645

Semiconductor physics

Electroluminescence at a wavelength of 1.5 $\mu$m in Si:Er/Si diode structures doped with Al, Ga, and B acceptors

V. P. Kuznetsov^ab, V. B. Shmagin^b, M. O. Marychev^c, K. E. Kudryavtsev^b, M. V. Kuznetsov^a, B. A. Andreev^b, A. V. Kornaukhov^a, O. N. Gorshkov^a, Z. F. Krasil'nik^b

^a Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
^b Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
^c Lobachevsky State University of Nizhny Novgorod

Abstract: Si:Er layers in diode structures were doped with Al, Ga, or B during growth by sublimation molecular-beam epitaxy. As a result, a sharp increase in the electroluminescence intensity at a wavelength of 1.5 $\mu$m was observed in diodes with thick bases (as large as 0.8 $\mu$m).

Received: 06.05.2010
Accepted: 18.05.2010