D. A. Vinokurov, D. N. Nikolaev, N. A. Pikhtin, A. L. Stankevich, V. V. Shamakhov, M. G. Rastegaeva, A. V. Rozhkov, I. S. Tarasov, “InGaAs/GaAs/AlGaAs lasers emitting at a wavelength of 1190 nm grown by MOCVD epitaxy on GaAs substrate”, Fizika i Tekhnika Poluprovodnikov, 2010, Volume 44, Issue 12,Pages <nobr>1640

This article is cited in 4 papers

Semiconductor physics

InGaAs/GaAs/AlGaAs lasers emitting at a wavelength of 1190 nm grown by MOCVD epitaxy on GaAs substrate

D. A. Vinokurov, D. N. Nikolaev, N. A. Pikhtin, A. L. Stankevich, V. V. Shamakhov, M. G. Rastegaeva, A. V. Rozhkov, I. S. Tarasov

Ioffe Institute, St. Petersburg

Abstract: InGaAs/GaAs/AlGaAs laser heterostructures are grown by MOCVD epitaxy on GaAs substrates. Mesastripe laser diodes with an aperture of 100 $\mu$m emitting at a wavelength of 1190 nm are fabricated. It is shown that, in these lasers, the active region is relaxed, which manifests itself in the spread of attainable maximal power for various lasers obtained from the same heterostructure. The maximal emission power in a CW mode of lasing for such lasers was 5.5 W per mirror.

Received: 29.04.2010
Accepted: 07.05.2010